Компания Mini-Circuits представила два новых широкополосных усилителя мощности на основе нитрида галлия

Производитель выпустил две модели усилителей GNA-63-5W+ и GNA-252-5W+, разработанные для военных, спутниковых и телекоммуникационных систем. Новые устройства обеспечивают высокую выходную мощность, линейность и эффективность в широком диапазоне частот от 10 МГц до 6 ГГц.

Перевод ИИ

Текст статьи доступен на языке оригинала.

Нажмите кнопку «Перевести статью» выше, чтобы сгенерировать перевод с помощью ИИ.

Оригинальный контент

Источник

Mini-Circuits announces two wideband GaN PAs Mini-Circuits has released two GaN-on-SiC HEMT MMIC power amplifiers designed to meet the demanding power, bandwidth, and linearity requirements of defence, communications, satellite, and test applications. The new GNA-63-5W+ operates from 10 MHz to 6 GHz, providing more than 6 W output power with typical saturated output power of +38.5 dBm. The amplifier delivers a typical large-signal gain of 12 dB and a typical power-added efficiency of 35 percent, with gain flatness better than ±1 dB. For applications requiring greater output power through 2.5 GHz, the new GNA-252-5W+ covers 10 MHz to 2.5 GHz and delivers more than 8 W output power. It achieves a typical saturated output power of +40 dBm, a typical large-signal gain of 13.5 dB, a typical power-added efficiency of 47 percent, and gain flatness better than ±0.5 dB. Both amplifiers combine high efficiency, flat gain, and strong linearity to support longer signal coverage, increased link margin, and improved signal-detection capability. Their low intermodulation distortion helps preserve signal integrity in high-fidelity and multicarrier systems. At an output level of +26 dBm per tone, the GNA-63-5W+ provides typical IM3 of -32 dBc and IM5 of -56 dBc, while the GNA-252-5W+ provides typical IM3 of -30 dBc and IM5 of -57 dBc. The devices are internally matched to 50 ohms at the RF input and output, eliminating the need for an external matching network and helping designers reduce component count, board area and development time. Both operate from a +28 V supply with a quiescent current of 400 mA and support operating temperatures from -55°C to +95°C. The GNA-63-5W+ is supplied in a 5 × 5 mm, 32-lead QFN-style package, while the GNA-252-5W+ is offered in a smaller 4 × 4 mm, 20-lead QFN-style package. Their compact surface-mount construction provides low-inductance RF transitions, effective thermal contact to the PCB and compatibility with high-volume assembly processes.